N-Channel MOSFET
SUP/SUB75N06-12L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.012...
Description
SUP/SUB75N06-12L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.012 @ VGS = 10 V 0.014 @ VGS = 4.5 V
ID (A)
75 70 D
TO-220AB
TO-263
G DRAIN connected to TAB G G D S Top View SUP75N06-12L SUB75N06-12L N-Channel MOSFET D S
Top View S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IAR EAR PD PD TJ, Tstg
Limit
60 "20 75 53
Unit
V
A 180 60 180 142b 3.75c –55 to 175 W _C mJ
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)c Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 70807 S-59182—Rev. B, 07-Sep-98 www.vishay.com S FaxBack 408-970-5600 RthJC RthJA 62.5 1.05
Symbol
Limit
40
Unit
_C/W
2-1
SUP/SUB75N06-12L
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Z G V l D i Current C IDSS V...
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