Document
SUP/SUB85N03-07P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.007 @ VGS = 10 V 0.01 @ VGS = 4.5 V
ID (A)a
85 a 75
TO-220AB
D
TO-263
G DRAIN connected to TAB G G D S Top View SUP85N03-07P D S S N-Channel MOSFET
Top View SUB85N03-07P
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d TC = 25_C TC = 100_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
30 "20 85a 64 240 75 280 107c 3.75 –55 to 175
Unit
V
A
mJ W _C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71147 S-00757—Rev. B, 10-Apr-00 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC
Symbol
Limit
40 62.5 1.4
Unit
_C/W
2-1
SUP/SUB85N03-07P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A
a D i Source S O State S R i Drain-Source Drain On On-State Resistance
Symbol
Test Condition
Min
Typ
Max
Unit
30 V 1 2 "100 1 50 250 120 0.006 0.007 0.011 0.015 0.01 20 S W A mA nA
VGS = 10 V, ID = 30 A, TJ = 125_C rDS(on) DS( ) VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A
Forward Transconductancea
gfs
VDS = 15 V, ID = 30 A
Dynamicb
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargeb Gate-Source Chargeb Gate-Drain Chargeb Turn-On Delay Timeb Rise Timeb Turn-Off Delay Timeb Fall Timeb Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V V, , RL = 0 0.18 18 W ID ^ 85 A, A VGEN = 10 V V, RG = 2 2.5 5W VDS = 15 V, V VGS = 10 V V, ID = 85 A VGS = 0 V, VDS = 25 V, f = 1 MHz 3720 715 370 60 13 10 11 70 50 105 25 140 ns 100 200 120 nC C pF F
Source-Drain Diode Ratings and Characteristics (TC = 25_C)c
Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time IS ISM VSD trr IF = 85 A, VGS = 0 V IF = 85 A, di/dt = 100 A/ms 1.2 55 85 A 200 1.5 100 V ns
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing.
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 71147 S-00757—Rev. B, 10-Apr-00
SUP/SUB85N03-07P
New Prod.