SI3867DV

Si3867DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.051 @ VGS = - 4.5 V - 20 0.067 @ VGS = - 3.3 V 0.100 @ VGS = - 2.5 V FEATURES ID (A) - 5.1 - 4.5 - 3.7 D TrenchFETr Power MOSFET D PWM Optimized APPLICATIONS D DC/DC - HDD - Power Supplies D Portable Devices Such As Cell Phones, PDA, DSC, and DVC (4) S TSOP-6 Top View 1 3 mm 6 5 (3) G 2 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm Ordering Information: Si3867DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State - 20 "12 Unit V - 5.1 - 3.7 - 20 - 1.7 2.0 1.0 - 55 to 150 - 3.9 - 2.8 A - 0.9 1.1 0.6 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72068 S-31988—Rev. B, 13-Oct-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3867DV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS ...