PNA1601M

Phototransistors PNA1601M (PN166) Silicon NPN Phototransistor For optical control systems Features High sensitivity Wide spectral sensitivity, suited for detecting various kinds of LEDs 12.5±1.0 0.8 0.5 max. Gate the rest Unit : mm 2.6±0.2 C0.5 0.8 R0.55 1.4±0.2 1.2±0.2 (0.4) 2.0 0.7 2.5±0.2 1.7 Ultraminiature, thin side-view type package 2-0.7 2-0.45 0.15 2 1 2.0 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 50 –25 to +65 –30 to +85 Unit V mA mW ˚C ˚C 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO SIR θ tr*2 tf*2 VCE(sat) *1 Conditions VCE = 10V VCE = 10V, H = VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 5mA RL = 100Ω ICE(L) = 10µA, H = 15µW/cm2 15µW/cm2 min 3 typ max 0.2 Unit µA µA nm deg. µs µs λP 850 35 4 4 0.5 V Measurements were made using infrared light (λ = 940 nm) as a light source. Switching time measuring circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collect...