PN116

Phototransistors PNA1605F (PN116) Silicon planar type Unit: mm For optical control systems 1.5±0.2 4.5±0.15 3.5±0.15 Not soldered 2.0 2.1±0.15 1.6±0.15 0.8±0.1 12.5 min. 10 min. High sensitivity Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 70° (typ.) Fast response: tr , tf = 8 µs (typ.) Side-view type package 3.9±0.25 ■ Features (2.4) 3-0.45±0.2 0.45±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-emitter voltage (Base open) Collector-base voltage (Emitter open) Emitter-collector voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Rating 20 30 5 5 10 100 −25 to +85 −30 to +100 Unit V V V V mA mW °C °C 1.27 1.27 1 2 3 1: Emitter 2: Collector 3: Base LSTFR103-001 Package ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Photocurrent Dark current Peak emission wavelength Half-power angle Rise time *2 Fall time *2 Collector-emitter saturation voltage *1 *1 Symbol ICE(L) ICEO λp θ tr tf VCE(sat) VCE = 10 V VCE = 10 V Conditions VCE = 10 V, L = 100 lx Min 0.2 Typ 0.8 0.05 900 70 8 9 Max Unit mA µA nm ° µs µs 2.00 The angle from which photocurrent becomes 50% VCC = 10 V, ICE(L) = 1 mA, RL = 100 Ω ICE(L) = 1 mA, L = 1 000 lx 0.3 0.6 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1...