PMF280UN
N-channel µTrenchMOS™ ultra low level FET
Rev. 01 — 27 February 2004
M3D102
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance s Footprint 40% smaller than SOT23 s Low threshold voltage.
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