MB81ES653225

FUJITSU SEMICONDUCTOR DATA SHEET DS05-11411-2E MEMORY CMOS 2 × 1 M × 32-BIT SINGLE DATA RATE I/F FCRAMTM Consumer/Embedded Application Specific Memory for SiP MB81ES653225-12/-12L CMOS 2-Bank × 1,048,576-Word × 32-Bit Fast Cycle Random Access Memory (FCRAM) with Single Data Rate for SiP ■ DESCRIPTION The Fujitsu MB81ES653225 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*) containing 67,108,864 memory cells accessible in a 32-bit format. The MB81ES653225 features a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81ES653225 is utilized using a Fujitsu advanced FCRAM core technology and designed for low power consumption and low voltage operation than regular synchronous DRAM (SDRAM) . The MB81ES653225 is dedicated for SiP (System in a package) , and ideally suited for various embedded/ consumer applications including digital AVs and image processing where a large band width and low power consumption memory is needed. * : FCRAM is a trademark of Fujitsu Limited, Japan. ■ PRODUCT LINE Parameter Clock Frequency (Max) Burst Mode Cycle Time (Min) Access Time from Clock (Max) Operating Current (Max) (32 page length) Power Down Mode Current (Max) Self Refresh Current (Max) (Ta = +85 °C) 0.5 mA 1000 µA CL = 2 CL = 3 CL = 2 CL = 3 CL = 2 CL = 3 MB81ES653225 12 54.0 MHz 85.0 MHz 18.5 ns 11.7 ns 12 ns 8.7 ns 35 m...