IXFR12N100F

HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS ID25 RDS(on) 1.05 Ω 1.20 Ω 12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr ≤ 250 ns (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol Test Conditions 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 12N100 10N100 12N100 10N100 12N100 10N100 Maximum Ratings 1000 1000 ± 20 ± 30 10 9 48 40 12 10 31 1 5 250 -40 ... +150 150 -40 ... +150 300 2500 5 V V V V A A A A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM (IXFR) G (TAB) D Isolated back surface* G = Gate S = Source D = Drain TAB = Drain Features z RF capable MOSFETs z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Switched-mode and resonant-mode power supplies, >500kHz switching z DC choppers z 13.5 MHz industrial applications z Pulse generation z Laser drivers z RF amplifiers Advantages z ISOPLUS 247TM package for clip or spring mounting z Space savings z Hig...