N-Channel Enhancement Mode Avalanche Rated / High dV/dt Low Gate Charge and Capacitances
Description
Advanced Technical Information
HiPerFETTM Power MOSFETs IXFR 12N100Q ISOPLUS247TM Q CLASS
VDSS
ID25
RDS(on) 1.05 W 1.20 W
1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr £ 200 ns
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
Symbol Test Conditions T J = 25°C to 150°C T J = 25°C to 150...
