Semiconductor
IRFP244, IRFP245, IRFP246, IRFP247
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs...
Semiconductor
IRFP244, IRFP245, IRFP246, IRFP247
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate power field effect
transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423.
July 1998
Features
15A and 14A, 275V and 250V rDS(ON) = 0.28Ω and 0.34Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance 275V, 250VDC Rated, 120VAC Line System Operation Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER IRFP244 IRFP245 IRFP246 IRFP247 PACKAGE TO-247 TO-247 TO-247 TO-247 BRAND IRFP244 IRFP245 IRFP246 IRFP247
G
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE
DRAIN (FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright
© Harri...