IRFP244

Semiconductor IRFP244, IRFP245, IRFP246, IRFP247 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423. July 1998 Features 15A and 14A, 275V and 250V rDS(ON) = 0.28Ω and 0.34Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance 275V, 250VDC Rated, 120VAC Line System Operation Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFP244 IRFP245 IRFP246 IRFP247 PACKAGE TO-247 TO-247 TO-247 TO-247 BRAND IRFP244 IRFP245 IRFP246 IRFP247 G S NOTE: When ordering, include the entire part number. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harri...