IRF1503

PD-94526A AUTOMOTIVE MOSFET Typical Applications ● ● IRF1503 D HEXFET® Power MOSFET VDSS = 30V G S 14V Automotive Electrical Systems 14V Electronic Power Steering Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Features ● ● ● ● ● RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (tested) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Single Pulse Avalanche Energy Tested Value† Avalanche Current Repetitive Avalanche Energy… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 240 170 75 960 330 2.2 ± 20 510 980 ...