IGD01N120H2

IGP01N120H2, IGD01N120H2 HighSpeed 2-Technology Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A nd IGB01N120H2 C G E P-TO-220-3-1 (TO-220AB) P-TO-263-3-2 (D²-PAK) (TO-263AB) P-TO-252-3-1 (D-PAK) (TO-252AA) Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGP01N120H2 IGB01N120H2 IGD01N120H2 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 225 (for SMD) °C VGE Ptot ±20 28 V W ICpuls Symbol VCE IC 3.2 1.3 3.5 3.5 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 1A 1A 1A Eoff 0.09mJ 0.09mJ 0.09mJ Tj 150°C 150°C 150°C Package P-TO-220-3-1 P-TO-263 (D PAK) P-TO-252 (DPAK) 2 Ordering Code Q67040-S4593 Q67040-S4592 Q67040-S4591 Power Semiconductors 1 Rev. 2, Mar-04 IGP01N120H2, IGD01N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient SMD ...