CPH3417

Ordering number : ENN7124 CPH3417 N-Channel Silicon MOSFET CPH3417 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm 2152A [CPH3417] 2.9 0.4 3 0.6 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.05 1.6 2.8 1 1.9 2 0.6 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±10 1.8 7.2 0.9 150 --55 to +125 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V Ratings min 20 1 ±10 0.4 1.9 2.8 160 200 280 210 280 390 1.3 typ max Unit V µA µA V S mΩ mΩ mΩ Marking : KS 0.2 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's ...