2SC6024

Ordering number : ENN8290 2SC6024 NPN Epitaxial Planar Silicon Transistor 2SC6024 Features UHF to C Band Low-Noise Amplifier and OSC Applications Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless package (1.4mm!0.8mm!0.6mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 9 3.5 2 35 120 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT1 fT2 Cob Cre 2 S21e 1 2 S21e  2 Conditions VCB=5V, IE=0A VEB=1V, IC=0A VCE=3V, IC=15mA VCE=1V, IC=5mA VCE=3V, IC=15mA VCB=1V, f=1MHz VCB=1V, f=1MHz VCE=1V, IC=5mA, f=2GHz VCE=3V, IC=15mA, f=2GHz VCE=1V, IC=5mA, f=2GHz Ratings min typ max 1.0 1 80 14 18 21 0.5 0.3 9 10.5 12.5 1.2 0.7 160 Unit µA µA GHz GHz pF pF dB dB dB NF Marking : NM Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as ...