Ordering number : ENN7379
2SA2112
PNP Epitaxial Planar Silicon Transistors
2SA2112
High Current Switching Applications...
Ordering number : ENN7379
2SA2112
PNP Epitaxial Planar Silicon
Transistors
2SA2112
High Current Switching Applications
Applications
Package Dimensions
unit : mm 2064A
[2SA2112]
2.5 1.45 6.9 1.0
DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.
Features
1.0
Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
4.5
0.6
1.0
0.9
0.5
1
2
3
0.45
1 : Emitter 2 : Collector 3 : Base
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Conditions
2.54
2.54
SANYO : NMP
Ratings --50 --50 --50 --6 --3 --6 --600 1 150 --55 to +150 Unit V V V V A A mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=--100mA VCE=-10V, IC=--500mA Ratings min typ max --1 --1 200 390 560 MHz Unit µA µA
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or ot...
