UPA2718GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2718GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain DESCRIPTION The µ PA2718GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = −10 V, ID = −6.5 A) RDS(on)2 = 14.5 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) Low Ciss: Ciss = 2810 pF TYP. Built-in gate protection diode Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 +0.10 –0.05 1 1.44 4 5.37 MAX. 0.8 1.8 MAX. 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M µ PA2718GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg –30 m20 m13 m130 2 2 150 –55 to +150 −13 16.9 V V A A W W °C °C A mJ Gate Gate Protection Diode Body Diode EQUIVALENT CIRCUIT Drain Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Notes 1. 2. 3. 4. Note4 Note4 IAS EAS Source PW ≤ 10 µs, Duty Cycle ≤ 1% Mounted on ceramic substrate of 1200 mm2 x 2.2 mm Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec...