UPA2781GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2781GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION The µPA2781GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES Built a Schottky Barrier Diode Low on-state resistance RDS(on)1 = 7.6 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 11.3 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 = 12.9 mΩ TYP. (VGS = 4.0 V, ID = 7 A) Low Ciss: Ciss = 900 pF TYP. Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA2781GR EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) [MOSFET] Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) IF(AV) PT PT Tch, Tj Tstg 30 ±20 ±13 ±52 2.5 2 1 150 −55 to + 150 V V A A A W W °C °C Gate Protection Diode Source Gate Schottky Diode Average Forward Current Total Power Dissipation Total Power Dissipation Storage Temperature [SCHOTTKY] Note3 Note3 [MOSFET] [SCHOTTKY] Channel & Junction Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Rectangle wave, 50% Duty Cycle 2 3. Mounted on ceramic ...