DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2781GR
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DESCRIPTI...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA2781GR
SWITCHING N-CHANNEL POWER MOS FET/
SCHOTTKY BARRIER DIODE
DESCRIPTION
The µPA2781GR is N-channel Power MOSFET, which built a
Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
FEATURES
Built a
Schottky Barrier Diode Low on-state resistance RDS(on)1 = 7.6 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 11.3 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 = 12.9 mΩ TYP. (VGS = 4.0 V, ID = 7 A) Low Ciss: Ciss = 900 pF TYP. Small and surface mount package (Power SOP8)
1 4 5.37 MAX.
+0.10 –0.05
6.0 ±0.3 4.4 0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 –0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA2781GR
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) [MOSFET] Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) IF(AV) PT PT Tch, Tj Tstg
30 ±20 ±13 ±52 2.5 2 1 150 −55 to + 150
V V A A A W W °C °C
Gate Protection Diode Source Gate
Schottky Diode
Average Forward Current Total Power Dissipation Total Power Dissipation Storage Temperature
[
SCHOTTKY]
Note3 Note3
[MOSFET] [
SCHOTTKY]
Channel & Junction Temperature
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Rectangle wave, 50% Duty Cycle 2 3. Mounted on ceramic ...