UPA2700GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2700GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µPA2700GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES Low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.3 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) Low Ciss: Ciss = 2600 pF TYP. (VDS = 10 V, VGS = 0 V) Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.15 0.05 MIN. 0.5 ±0.2 0.10 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M µPA2700GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±20 ±17 ±68 2.0 150 –55 to + 150 17 28.9 V V A A W °C °C A mJ Source Gate Drain EQUIVALENT CIRCUIT Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 Body Diode IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Remark Strong electric field, when exposed to this device, can cause destruction of th...