UPA2706GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2706GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µPA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A) Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V) Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M µ PA2706GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 30 ±20 ±11 ±44 2.0 150 −55 to + 150 11 12.1 V V A A W °C °C A mJ Gate Body Diode Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Caution Strong electric field, when exposed to this device, can c...