UPA2707TP

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2707TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µ PA2707TP which has a heat spreader is Nchannel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. ORDERING INFORMATION PART NUMBER PACKAGE Power HSOP8 Note µ PA2707TP-E1 µ PA2707TP-E1-AZ µ PA2707TP-E2 Power HSOP8 Power HSOP8 FEATURES Low on-state resistance RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 5.6 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V) Small and surface mount package (Power HSOP8) µ PA2707TP-E2-AZ Note Power HSOP8 Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30 ±20 ±42 ±76 40 4.3 150 −55 to +150 19 36 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Ambient Channel to Case Note Rth(ch-A) Rth(ch-C) 96.2 3.13 °C/W ...