DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA2713GR
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2713GR is P-ch...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µPA2713GR
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The µPA2713GR is P-channel MOS Field Effect
Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
FEATURES
Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = −10 V, ID = −4.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = −4.5 V, ID = −4.0 A) RDS(on)3 = 30 mΩ MAX. (VGS = −4.0 V, ID = −4.0 A) Low Ciss: Ciss = 1600 pF TYP. Small and surface mount package (Power SOP8)
1
4 5.37 MAX.
+0.10 –0.05
6.0 ±0.3 4.4 0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 ±0.2 0.10
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
1.27 0.78 MAX. 0.40
+0.10 –0.05
0.12 M
µPA2713GR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2 Note3
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
−30 m20 m8 m32 2 2 150 −55 to +150 8 6.4
V V A A W W °C °C A mJ
Source Gate
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature
EQUIVALENT CIRCUIT
Drain
Single Avalanche Current Single Avalanche Energy Notes 1. 2. 3. 4.
Note4 Note4
IAS EAS
Body Diode
PW ≤ 10 µs, Duty Cycle ≤ 1% 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec Starting Tch =...