UPA2714GR

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2714GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The µPA2714GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain 1.8 MAX. Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −3.5 A) RDS(on)2 = 30 mΩ MAX. (VGS = −4.5 V, ID = −3.5 A) RDS(on)3 = 34 mΩ MAX. (VGS = −4.0 V, ID = −3.5 A) Low Ciss: Ciss = 1370 pF TYP. Small and surface mount package (Power SOP8) FEATURES 1 4 5.37 MAX. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.44 0.15 0.05 MIN. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M µPA2714GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg −30 V V A A W W °C °C A mJ Source Gate Drain m20 m7 m28 2 2 150 −55 to +150 −7 EQUIVALENT CIRCUIT Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Body Diode Single Avalanche Current Single Avalanche Energy Notes 1. 2. 3. 4. Remark Note4 Note4 IAS EAS 4.9 PW ≤ 10 µs, Duty Cycle ≤ 1% 2 Mounted on a ceramic substrate of 1200 mm x 2.2 mm Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm) , PW = 10 se...