MV104

ON Semiconductort Silicon Tuning Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning. High Figure of Merit  Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz Guaranteed Capacitance Range 37–42 pF @ VR = 3.0 Vdc (MV104) Dual Diodes – Save Space and Reduce Cost Monolithic Chip Provides Near Perfect Matching – Guaranteed ± 1.0% (Max) Over Specified Tuning Range MV104 DUAL VOLTAGE VARIABLE CAPACITANCE DIODE 1 2 3 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 32 200 280 2.8 +125 –55 to +150 Unit Vdc mAdc mW mW/°C °C °C CASE 29–11, STYLE 15 TO–92 (TO–226AA) Pin 1 A1 Pin 2 C Pin 3 A2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Reverse Breakdown Voltage (IR = 10 µAdc) Reverse Voltage Leakage Current TA = 25°C (VR = 30 Vdc) TA = 60°C Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 32 — — — Typ — — — 280 Max — 50 500 — Unit Vdc nAdc ppm/°C CT, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MV104 Min 37 Max 42 Q, Figure of Merit VR = 3.0 Vdc f = 100 MHz Min 100 Typ 140 CR, Capacitance Ratio C3/C30 f = 1.0 MHz Min 2.5 Max 2.8 © Semiconductor Components Industries, LLC, 2001 1...