SPW17N80C3

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances SPW17N80C3 Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 V 0.29 Ω 88 nC PG-TO247-3 CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application (i.e. active clamp forward) Type SPW17N80C3 Package PG-TO247-3 Marking 17N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=3.4 A, V DD=5...