SPW20N60CFD Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Per...
SPW20N60CFD Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme d v/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7
P-TO247
V Ω A
Type SPW20N60CFD
Package P-TO247
Ordering Code Q67040-S4617
Marking 20N60CFD
Maximum Ratings Parameter Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 10 A, V DD = 50 V Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 20 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode d v/dt
IS=20.7A, V DS=480V, T j=125°C
Symbol ID
Value 20.7 13.1 52 690 1 20 40 ±20 ±30 208 -55... +150
Unit A
ID puls EAS
mJ
IAR dv/dt VGS VGS Ptot Tj , Tstg
A V/ns V W °C
Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, T C = 25°C Operating and storage temperature
Page 1
2003-12-23
SPW20N60CFD
Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, ID = 20.7 A, Tj = 125 °C
Symbol dv/dt di F/dt
Value 80 900
Unit V/ns A/µs
Maximum diode commutation speed
V DS = 480 V, ID = 20.7 A, Tj = 125 °C
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless oth...