SPW47N60S5

Final data SPW47N60S5 VDS RDS(on) ID 600 0.07 47 P-TO247 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO 247 V Ω A Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type SPW47N60S5 Package P-TO247 Ordering Code Q67040-S4240 Marking 47N60S5 Maximum Ratings Parameter Symbol ID Value Unit Continuous drain current TC = 25 °C TC = 100 °C A 47 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 10 A, VDD = 50 V I D puls EAS 94 1800 1 20 ±20 ±30 mJ Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 20 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature VGS Ptot T j , T stg A V W °C 415 -55... +150 Page 1 2003-07-02 Final data Maximum Ratings Parameter Symbol SPW47N60S5 Value Unit Drain Source voltage slope V DS = 480 V, ID = 47 A, Tj = 125 °C dv/dt 20 V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=20A br...