MRF315A
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF315A is Designed for Class C Power Amplifier Applicatio...
MRF315A
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI MRF315A is Designed for Class C Power Amplifier Applications up to 200 MHz.
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
PG = 9.0 dB min. at 45 W/ 150 MHz Withstands 30:1 Load VSWR Omnigold™ Metalization System
B
C E
ØC
E B
H I J
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC
O O
D
5.0 A 65 V 35 V 4.0 V 75 W -65 C to +200 C -65 C to +150 C 2.3 C/W
O O O
DIM A B C D E F G H I J
#8-32 UNC-2A F E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84
.385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
ORDER CODE: ASI10757
O
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVCBO BVEBO ICBO hFE Cob PG ηC Ψ
TC = 25 C
NONETEST CONDITIONS
IC = 200 mA IC = 200 mA IC = 10 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V IC = 500 mA f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
35 65 65 4.0 4.0 5.0 200 65 9.0 50 11 60
UNITS
V V V V mA --pF dB %
VCE = 28 V
POUT = 45 W
f = 150 MHz
30:1 minimum without degration in output power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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