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IXDR30N120

IXYS Corporation
Part Number IXDR30N120
Manufacturer IXYS Corporation
Description High Voltage IGBT
Published Sep 21, 2005
Detailed Description High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability ...
Datasheet PDF File IXDR30N120 PDF File

IXDR30N120
IXDR30N120

Overview
High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA G C E IXDR 30N120 IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE(sat) typ = 2.
4 V C G E IXDR 30N120 D1 ISOPLUS 247TM E153432 G C E Isolated Backside* G = Gate C = Collector E = Emitter Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg VISOL Weight Symbol V(BR)CES VGE(th) ICES IGES VCE(sat) Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 47 Ω Clamped inductive load, L = 30 mH VGE = ±15 V, VCE = VCES, TJ = 125°C ...


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