MRF492

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF492/D NPN Silicon RF Power Transistor Designed for 12.5 volt low band VHF large–signal power amplifier applications in commercial and industrial FM equipment. Specified 12.5 V, 50 MHz Characteristics — Output Power = 70 W Minimum Gain = 11 dB Efficiency = 50% Load Mismatch Capability at High Line and RF Overdrive MRF492 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 18 36 4.0 20 250 1.43 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C CASE 211–11, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Symbol RθJC Max 0.7 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 13.6 Vdc, VBE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICES 18 36 4.0 — — — — — — — — 20 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 10 — 150 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob — 275 ...