MRF426

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF426/D NPN Silicon RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics — Output Power = 25 W (PEP) Minimum Gain = 22 dB Efficiency = 35% Intermodulation Distortion @ 25 W (PEP) — IMD = – 30 dB (Max) 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Class A and AB Characterization BLX 13 Equivalent MRF426 25 W (PEP), 30 MHz RF POWER TRANSISTOR NPN SILICON CASE 211–07, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Withstand Current — 5 s Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC — PD Tstg Value 35 65 4.0 3.0 6.0 70 0.4 – 65 to +150 Unit Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.5 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICES 35 65 4.0 — — — — — — — — 10 Vdc Vdc Vdc mAdc NOTE: (continued) 1. ...