MRF454

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF454/D The RF Line NPN Silicon RF Power Transistor Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50% MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 25 45 4.0 20 250 1.43 –65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF454 80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.7 Unit °C/W CASE 211–11, STYLE 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)EBO 18 36 4.0 — — — — — — Vdc Vdc Vdc ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 40 — 150 — DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) Cob — — 250 pF FUNCTIONAL TESTS (Figure 1) Common–Emitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 80 W, f = 30 MHz) Collector Efficiency (VCC = 12.5 Vdc, ...