DatasheetsPDF.com

TA8125S

Toshiba Semiconductor

DUAL PRE-AMPLIFIER

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8125S Dual Pre−Amplifier The TA8125S is dual output prea...


Toshiba Semiconductor

TA8125S

File Download Download TA8125S Datasheet


Description
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA8125S Dual Pre−Amplifier The TA8125S is dual output preamplifier designed for car or home use. Features · High open loop voltage gain : GVO = 100dB (typ.) at f = 1kHz · Excellent channel separation and high ripple rejection : CHsep = 65dB (typ.) (f = 10kHz, Rg = 2.2kΩ, VOUT = 0.775Vrms (0dBm)) : R.R. = 50dB (typ.) (fripple = 100Hz, Rg = 2.2kΩ, VOUT = 0.775Vrms (0dBm)) Weight: 0.92g (typ.) · Low noise : VNI = 1.0µVrms (typ.) at Rg = 2.2kΩ, BW = 20Hz~20kHz, NAB EQ · Wide operating supply voltage range: VCC (opr.) = 6~16V (Ta = 25°C) Block Diagram TA8125S 1 2002-10-30 Maximum Ratings (Ta = 25°C) TA8125S Characteristic Symbol Rating Unit Supply voltage Power dissipation Operating temperature Storage temperature (Note) VCC PD Topr Tstg 16 700 -30~80 -55~150 V mW °C °C (Note) Derated above Ta = 25°C in the proportion of 5.6mW / °C. Electrical Characteristics (unless otherwise specified, VCC = 6V, f = 1kHz, Rg = 600Ω, RL = 10kΩ, Ta = 25°C) Characteristic Quiescent current Voltage gain Maximum output voltage Equivalent input noise voltage Symbol ICCQ GVO GV VOM VNI Test Circuit — — — — Test Condition VIN = 0 VOUT = 7.75µVrms (-100dBm) VOUT = 0.775Vrms (0dBm) THD = 1% — Rg = 2.2kΩ, B.W = 20Hz~20kHz Min. Typ. Max. — 75 38.5 1.0 — 3 100 41.5 1.8 1.0 6 — 44.5 — 1.7 Input resistance Total harmonic distortion Channel separation Ripple rejection ratio RIN THD CHsep R.R. —— — VOUT = 0.775Vr...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)