2SK3538

2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3538 Switching Regulator, DC-DC Converter Applications · · · · Low drain-source ON resistance: RDS (ON) = 75 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR (Note 3) Channel temperature Storage temperature range EAR Tch Tstg Rating 500 500 ±30 8 32 65 312 8 6.5 150 -55 to 150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy JEDEC JEITA TOSHIBA ― SC-97 2-9F1B Weight: 0.74 g (typ.) Thermal Characteristics 4 Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.92 Unit °C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.3 mH, IAR = 8 A, RG = 25 W Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 2 3 1 2003-02-14 2SK3538 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current ...