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MT8LSDT3264A Dataheets PDF



Part Number MT8LSDT3264A
Manufacturers Micron Technology
Logo Micron Technology
Description SYNCHRONOUS DRAM MODULE
Datasheet MT8LSDT3264A DatasheetMT8LSDT3264A Datasheet (PDF)

256MB / 512MB (x64) 168-PIN SDRAM DIMMs SYNCHRONOUS DRAM MODULE Features • PC100- and PC133-compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Unbuffered • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal SDRAM banks for hiding row access/precharge • Programmable burst lengths: 1, 2,.

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256MB / 512MB (x64) 168-PIN SDRAM DIMMs SYNCHRONOUS DRAM MODULE Features • PC100- and PC133-compliant • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Unbuffered • 256MB (32 Meg x 64), 512MB (64 Meg x 64) • Single +3.3V ±0.3V power supply • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal SDRAM banks for hiding row access/precharge • Programmable burst lengths: 1, 2, 4, 8, or full page • Auto Precharge, including Concurrent Auto Precharge, and Auto Refresh Modes • 64ms, 8,192 cycle Auto Refresh cycle • Self Refresh Mode • LVTTL-compatible inputs and outputs • Serial Presence-Detect (SPD) MT8LSDT3264A(I) - 256MB MT16LSDT6464A(I) - 512MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds Figure 1: 168-Pin DIMM (MO–161) Standard Low Profile OPTIONS • Package Unbuffered 168-pin DIMM (gold) • Operating Temperature Range Commercial (0°C to +70°C) Industrial (-40°C to +85°C)1 • Memory Clock/CAS Latency (133 MHz)/CL = 2 (133 MHz)/CL = 3 (100 MHz)/CL = 2 NOTE: MARKING A G None I -13E -133 -10E Table 2: MODULE MARKINGS -13E -133 -10E Timing parameters PC100 CL - tRCD - tRP 2-2-2 2-2-2 2-2-2 PC133 CL - tRCD - tRP 2-2-2 3-3-3 NA Table 3: Part Numbers SYSTEM CONFIGURATION BUS SPEED 32 Meg x 64 32 Meg x 64 32 Meg x 64 64 Meg x 64 64 Meg x 64 64 Meg x 64 133 MHz 133 MHz 100 MHz 133 MHz 133 MHz 100 MHz PARTNUMBER1 MT8LSDT3264AG-13E_ MT8LSDT3264AG(I)-133_ MT8LSDT3264AG-10E_ MT16LSDT6464AG-13E_ MT16LSDT6464AG(I)-133_ MT16LSDT6464AG-10E_ NOTE: 1. Consult Micron for availability; Industrial Temperature Option available in -133 speed only. Table 1: Address Table 256MB MODULE 8K 4 (BA0, BA1) 32 Meg x 8 8K (A0–A12) 1K (A0–A9) 1 (S0,S2) 512MB MODULE 8K 4 (BA0, BA1) 32 Meg x 8 8K (A0–A12) 1K (A0–A9) 2 (S0,S2; S1,S3) Refresh Count Device Banks Device Configuration Row Addressing Column Addressing Module Banks 1. The designators for component and PCB revision are the last two characters of each part number. Consult factory for current revision codes. Example: MT8LSDT3264AG-133B1. 32,64 Meg x 64 SDRAM DIMMs SD8_16C32_64x64AG_C.fm - Rev. C 11/02 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology Inc. 256MB / 512MB (x64) 168-PIN SDRAM DIMMs Table 4: Pin Assignment, Standard PCB (168-Pin DIMM Front) 22 NC 43 VSS 64 23 VSS 44 NC 65 24 NC 45 S2# 66 25 NC 46 DQMB2 67 26 VDD 47 DQMB3 68 27 WE# 48 NC 69 28 DQMB0 49 VDD 70 29 DQMB1 50 NC 71 30 S0# 51 NC 72 31 NC 52 NC 73 32 VSS 53 NC 74 33 A0 54 VSS 75 34 A2 55 DQ16 76 35 A4 56 DQ17 77 36 A6 57 DQ18 78 37 A8 58 DQ19 79 38 A10 59 VDD 80 39 BA1 60 DQ20 81 40 VDD 61 NC 82 41 VDD 62 NC 83 42 CK0 63 CKE1 84 VSS DQ21 DQ22 DQ23 VSS DQ24 DQ25 DQ26 DQ27 VDD DQ28 DQ29 DQ30 DQ31 VSS CK2 NC NC SDA SCL VDD Table 5: Pin Assignment, Standard PCB (168-Pin DIMM Back) 106 NC 127 VSS 148 107 VSS 128 CKE0 149 108 NC 129 S3# 150 109 NC 130 DQMB6 151 110 VDD 131 DQMB7 152 111 CAS# 132 NC 153 112 DQMB4 133 VDD 154 113 DQMB5 134 NC 155 114 S1# 135 NC 156 115 RAS# 136 NC 157 116 VSS 137 NC 158 117 A1 138 VSS 159 118 A3 139 DQ48 160 119 A5 140 DQ49 161 120 A7 141 DQ50 162 121 A9 142 DQ51 163 122 BA0 143 VDD 164 123 A11 144 DQ52 165 124 VDD 145 NC 166 125 CK1 146 NC 167 126 A12 147 NC 168 VSS DQ53 DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 VDD DQ60 DQ61 DQ62 DQ63 VSS CK3 NC SA0 SA1 SA2 VDD PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 VSS DQ0 DQ1 DQ2 DQ3 VDD DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VDD DQ14 DQ15 NC PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 VSS DQ32 DQ33 DQ34 DQ35 VDD DQ36 DQ37 DQ38 DQ39 DQ40 VSS DQ41 DQ42 DQ43 DQ44 DQ45 VDD DQ46 DQ47 NC Figure 2: PIN Locations (168-PIN DIMM) Front View U1 U2 U3 U4 U6 U7 U8 U9 U10 PIN 1 PIN 41 PIN 84 Back View (Populated only for 512MB module) U11 U12 U13 U14 U16 U17 U18 U19 PIN 168 Indicates a VDD pin PIN125 Indicates a VSS pin PIN 85 See Figure 10, 256MB Module Dimensions, on page 23 and Figure 11, 512MB Module Dimensions, on page 24 for module dimensions. 32,64 Meg x 64 SDRAM DIMMs SD8_16C32_64x64AG_C.fm - Rev. C 11/02 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology Inc. 256MB / 512MB (x64) 168-PIN SDRAM DIMMs Table 6: Pin Descriptions SYMBOL RAS#, CAS#, WE# CK0-CK3 TYPE Input Input DESCRIPTION Command Inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. Clock: CK is driven by the system clock. All SDRAM input signals are sampled on the positive edge of CK. CK also increments the internal burst counter and controls the output registers. Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CK signal. Deactivating the clock provides PRECHARGE POWER-DOWN and SELF REFRESH o.


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