2SK3576

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3576 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3576 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 2.8 ±0.2 PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.16+0.1 –0.06 0.65–0.15 +0.1 3 FEATURES 2.5V drive available Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 75 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A) 1.5 0 to 0.1 1 2 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 ORDERING INFORMATION PART NUMBER 2SK3576 PACKAGE SC-96 (Mini Mold Thin Type) 1 : Gate 2 : Source 3 : Drain Marking: XK ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 EQUIVALENT CIRCUIT VDSS VGSS ID(DC) 20 ±12 ±4.0 ±16 0.2 1.25 150 –55 to +150 V V A A W W °C °C Gate Body Diode Drain ID(pulse) PT1 Note2 Total Power Dissipation (TA = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. PT2 Tch Tstg Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When ...