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IXUC200N055 Dataheets PDF



Part Number IXUC200N055
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Trench Power MOSFET ISOPLUS220
Datasheet IXUC200N055 DatasheetIXUC200N055 Datasheet (PDF)

ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC200N055 VDSS = 55 V ID25 = 200 A RDS(on) = 5.1 mΩ ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit TC = 25°C TC = 25°C Maximum Ratings 55 ±20 200 160 200 140 45 500 300 -55 ... +175 175 -55 ...

  IXUC200N055   IXUC200N055


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ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC200N055 VDSS = 55 V ID25 = 200 A RDS(on) = 5.1 mΩ ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit TC = 25°C TC = 25°C Maximum Ratings 55 ±20 200 160 200 140 45 500 300 -55 ... +175 175 -55 ... +150 V V A A A A A mJ W °C °C °C °C V~ G = Gate, S = Source * Patent pending G D S Isolated back surface* D = Drain, Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(<15pF) l Unclamped Inductive Switching (UIS) rated l 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 ... 65 / 2.4 ...11 N/lb 2 g Applications Automotive 42V and 12V systems - electronic switches to replace relays and fuses - choppers to replace series dropping resistors used for motors, heaters, etc. - inverters for AC drives, e.g. starter generator - DC-DC converters, e.g. 12V to 42V, etc. l Power supplies - DC - DC converters - Solar inverters l Battery powered systems - choppers or inverters for motor control in hand tools - battery chargers l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5.1 m Ω mΩ 4 20 0.2 ±200 V µA mA nA RDS(on) VGS(th) IDSS IGSS VGS = 10 V, ID = 100 A, Note 3 VGS = 10 V, ID = ID90, Note 3 VDS = VGS, ID = 2 mA VDS = VDSS VGS = 0 V VGS = ±20 VDC, VDS = 0 TJ = 25°C TJ = 125°C 2 4.0 Advantages l l l Easy assembly: no screws or isolation foils required Space savings High power density © 2000 IXYS All rights reserved 98761 (11/00) IXUC200N055 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 VGS = 10 V, VDS = 14 V, ID = 100 A 44 72 35 VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A, RG = 4.7 Ω 115 230 155 0.5 0.30 nC nC nC ns ns ns ns K/W K/W ISOPLUS220 OUTLINE Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCH Source-Drain Diode Symbol VSD trr Test Conditions IF = 50 A, VGS = 0 V Note 3 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 0.9 80 1.3 V ns Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source IF = 150 A, di/dt = -200 A/µs, VDS = 30 V Note: 1. MOSFET chip capability 2. Intrinsic diode capability 3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 .


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