UF2815B

= EC ----z = an AMP company RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz Features l l l l l l UF28156 v2.00 N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation Absolute Maximum Ratings at 25°C L n 3.66 .lO 4.32 35 344 JJ04 1 .l70 DO6 Electrical Characteristics at 25°C InputCapacitance Output Capacitance ReverseCapacitance Power Gain Drain Efficiency Load Mismatch Tolerance Ccm CRSS GP ‘7D VSWR-T 10 50 15 7.2 2O:l pF pF dB % - V,,=28.0 V, F=l .O MHz Vos=28.0 V, F=l .OMHz V,,=28.0 V. F=l .OMHz V,,=28.0 V, 1,,=150.0 mA, P,,$5.0 V,,=28.0 V, I,,=1 50.0 mA, P,,~l5.0 V,,=28.0 V, 1,,=150.0 mA, P,,,=l5.0 W, F&O0 MHz W, F=500 MHz W. F=500 MHz Specifications Subject to Change Without Notice. M/A-COM, inc. RF MOSFET Power Transistor, 15W, 28V UF2815B v2.00 Typical Broadband Performance Curves POWER OUTPUT I CAPACITANCES 16 , vs VOLTAGE vs VOLTAGE MHz F=l .O MHz P,,=l .O W IDO= 50 mA F&O0 10 5 t a- . 2r 5 10 15 ",, (") 20 2.5 30 GAIN vs FREQUENCY v,,r28 V P,,=15 W lDQ=lOO mA 70 EFFICIENCY vs FREQUENCY mA PO,,=15 W VDD=28 V I,,=150 “I I 0 loo 200 300 400 500 50 loo 200 300 400 500 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT vs POWER INPUT Vo,=28 V IDo= 50 mA I 0.08 0.1 0.25 POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, Inc. RF MOSFET Power Transistor, 15W, 28V UF2815B v2.ocl Typical ...