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RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz
Features
l l l l l
UF281 OOV
v2.00
N-Channel Enhancement DMOS Structure Lower Capacitances Lower
&lode Device Operation
for Broadband
High Saturated Output Power
Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
I Parameter Drain-S...
