UF28100M

an AMP company RF MOSFET Power 100 - 500 MHz Features N-Channel Enhancement DMOS Structure Lower Capacitances for Broadband Mode Device Transistor, lOOW, 28V UF281 OOM Operation Devices High Saturated Output Power Lower Noise Figure Than Competitive Absolute Maximum Ratings at 25°C pi Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 250 200 -55 to +150 0.7 W “C “C “Ciw PD T, T STG El JO I4 II P &w 505 m t.74 a&b, a¶ .m4 am ooc 1 1 1 ale a?4 ace Electrical Characteristics I Parameter at 25°C ( Symbol 1 Min 1 Max 1 Units 1 Test Conditions 1 Drain-Source Breakdown Voltage BVDSS ‘OS5 ‘GSS V GSCTHI GM C ISS C OS.5 C RSS % 65 3.0 3.0 V mA pA V S pF pF pF dB % dB - Drain-Source LeakageCurrent Gate-Source Leakage Current I V,,=O.O V, I,,=150 v,,=2a.o v,,=20 V,,=lO.O V,,=lO.O v,=2a.o V,s=28.0 mA’ v. vo,=o.o v v, v,,=o.o V’ mA‘ mA, ~v,,=l .O V, 80 ps Pulse’ Gate Threshold Voltage ForwardTransconductance input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Return Loss Load Mismatch Tolerance * Per Side Specifications 2.0 1.5 6.0 135 90 24 V, 1,,=300.0 V, 1,,=3000.0 v, F=l .o MHz’ V, F=l .O MHz’ v,,=2a.ov, F=I .OMHZ* V,,=28.0 -v,,=%.O V,,=28.0 v,,=28.0 V, 1,,=600.0 V, 1,,=600.0 V, 1,,=600.0 V. 1,,=600.0 mA, P,,=lOO.O mA, P,,=lOO.O W. F=500 MHz W, F=500 MHz I 10 50 10 3O:l mA, PO,,=1 00.0 W, F=500 MHz mA, P,,,.=100.0 W, F=500 MHz VSWR-T - Subject to Change Without Notice. M/A-COM, inc. ...