TMOS POWER FET
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.™ High Energy Po...
Description
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB4N80E1/D
Product Preview
TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Short Heatsink Tab Manufactured — Not Sheared Specially Designed Leadframe for Maximum Power Dissipation
MTB4N80E1
Motorola Preferred Device
TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM
®
D
G CASE 418C–01, Style 2 D2PAK–SL S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage ...
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