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MTB1306 Dataheets PDF



Part Number MTB1306
Manufacturers Motorola
Logo Motorola
Description TMOS POWER FET
Datasheet MTB1306 DatasheetMTB1306 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1306/D Advance Information HDTMOS E-FET.™ High Density Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is designed.

  MTB1306   MTB1306


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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB1306/D Advance Information HDTMOS E-FET.™ High Density Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Short Heatsink Tab Manufactured — Not Sheared • Specially Designed Leadframe for Maximum Power Dissipation • Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MTB1306 TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM CASE 418B–03 D2PAK MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (1) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 Ω) Thermal Resistance — Junction–to–Case — Junction–to–Ambient — Junction–to–Ambient (1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5.0 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size. This document contains information on a new product. Specifications and information herein are subject to change without notice. Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 30 30 ± 20 ± 20 75 59 225 150 1.2 2.5 – 55 to 150 280 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts °C mJ TJ, Tstg EAS RθJC RθJA RθJA TL 0.8 62.5 50 260 °C/W °C E–FET and HDTMOS are trademarks of Motorola, Inc. Motorola TMOS © Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MTB1306 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 38 Adc) (VGS = 5.0 Vdc, ID = 38 Adc) Drain–to–Source On–Voltage (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C) Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge Vd , ID = 75 Adc, Ad , ( DS = 24 Vdc, (V VGS = 5.0 Vdc) (VDD = 15 Vdc, Vd ID = 75 Adc, Ad VGS = 5.0 5 0 Vdc, Vdc RG = 4.7 Ω) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 20 Adc, Ad , VGS = 0 Vdc, Vd , ( dIS/dt = 100 A/µs) Reverse Recovery Stored Charge (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. trr ta tb QRR VSD — — — — — — 0.75 0.64 84 35 53 0.13 1.1 — — — — — µC ns Vdc — — — — — — — — 17 170 68 145 50 8.3 25.3 17.2 35 340 136 290 70 — — — nC ns (VDS = 25 Vdc, Vdc VGS = 0 Vdc, Vdc f = 1.0 MHz) Ciss Coss Crss — — — 2560 1305 386 3584 1827 772 pF VGS(th) 1.0 RDS(on) — — VDS(on) — — gFS 15 0.44 — 55 0.5 0.38 — mhos 5.8 7.4 6.5 8.5 1.5 2.0 mW Vdc V(BR)DSS 30 IDSS — — IGSS — — — — 10 100 100 nAdc — — µAdc Vdc Symbol Min Typ Max Unit Vdc 2 Motorola TMOS Power MOSFET Transistor Device Data MTB1306 TYPICAL ELECTRICAL CHARACTERISTICS 150 VGS = 10 V I D , DRAIN CURRENT (AMPS) 125 TJ = 25°C 100 75 50 25 0 0 0.5 1.0 1.75 0.25 0.75 1.25 1.5 VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) 2.0 4.0 V 5.0 V ID , DRAIN CURRENT (AMPS) 180 160 140 120 100 80 60 40 20 0 2.0 125°C TJ = –55°C 2.5 3.0 3.5 4.0 VGS, GATE–TO–SOURCE VOLTAGE (VOLTS) 4.5 25°C VDS ≥ 10 V Figure 1. On–Region Characteristics RDS(on) , DRAIN–TO–SOURCE .


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