MRF6409

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6409/D NPN Silicon RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. To be used in Class AB Specified 26 Volts, 960 MHz Characteristics Output Power — 20 Watts CW Gain — 11 dB Typ Efficiency — 60% Typ MRF6409 20 W, 960 MHz RF POWER TRANSISTOR NPN SILICON CASE 319–07, STYLE 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Symbol Min Typ Value 24 55 4.0 5.0 45 0.26 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Max 3.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Emitter–Base Breakdown Voltage (IB = 5.0 mAdc, IC =0) Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector–Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)CEO V(BR)EBO V(BR)CES ICES 24 4.0 55 — 30 5.0 60 — — — — 6.0 Vdc Vdc Vdc mA (1) Thermal resistance is determined under specified RF operating condition. RF D...