MRF653

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF653/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.0 dB (Typ) Efficiency = 65% (Typ) Gold Metallized, Emitter Ballasted for Long Life and Reliability Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 16.5 38 4.0 2.75 44 0.25 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C MRF653 10 W, 512 MHz RF POWER TRANSISTOR NPN SILICON CASE 244–04, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 4.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0) V(BR)CEO V(BR)CES V(BR)EBO IC...