IRFP460P

PD-93946A IRFP460P l l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder Plated for Reflowing HEXFET® Power MOSFET D VDSS = 500V RDS(on) = 0.27Ω G S Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. The solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. ID = 20A TO-247AC Max. 20 13 80 280 2.2 ± 20 960 20 28 3.5 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm) 230 (Time above 183 °C should not exceed 100s) Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt ƒ Operating Junction and S...