IRFP440

IRFP440 Data Sheet July 1999 File Number 2089.3 8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17425. Features 8.8A, 500V rDS(ON) = 0.850Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP440 PACKAGE TO-247 BRAND IRFP440 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) 4-347 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFP440 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFP440 500 500 8.8 5.6 35 ±20 150 1.2 480 -55 to 150 300 260 UNITS V V A A A...