IRFP450N

PD- 94216 SMPS MOSFET IRFP450N HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l VDSS 500V Rds(on) max 0.37Ω ID 14A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) l TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 14 8.8 56 200 1.6 ± 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V/ns °C Typical SMPS Topologies l l l Two transistor Forward Half Bridge and Full Bridge PFC Boost through … are on page 8 Notes  www.irf.com 1 1/17/02 IRFP450N Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 ––– ––– 3.0 ––– ––– ––– ––– Typ. ...