DP500

Semiconductor DP500 PNP Silicon Transistor Description Extremely low collector-to-emitter saturation voltage ( VCE(SAT)=-0.2V Typ. @IC /IB =-3A/-150mA) Suitable for low voltage large current drivers Excellent hFE Linearity Complementary pair with DN500 Ordering Information Type NO. DP500 Marking DP500 Package Code T-92 Outline Dimensions unit : mm PIN Connections 1. Emitter 2. Collector 3. Base KST-9091-000 1 DP500 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25° C) Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings -15 -12 -5 -5 625 150 -55~150 Unit V V V A mW °C °C * : When mounted on 40× 40× 0.8mm ceramic substate Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter on voltage Base-Emitter on voltage Transition frequency Collector output capacitance (Ta=25° C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 * Test Condition IC=-50µA, I E =0 IC=-1mA, IB=0 IE =-50µA, IC =0 VCB=-12V, I E =0 VEB =-5V, IC =0 VCE=-1V, IC =-100mA VCE=-1V, IC =-3A IC=-3A, IB =-150mA IC=-3A, IB =-150mA VCB=-5V, I C=-500mA VCB=-10V, I E =0, f=1MHz Min. -15 -12 -5 120 40 - Typ. 150 - Max. -1 -1 700 -0.3 -1.2 50 Unit V V V µA µA V V MHz pF h FE2 VCE(sat1) VBE(sat) ...