SGA1163

Preliminary Product Description SGA-1163 Sirenza Microdevices’ SGA-1163 is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for applications to 6 GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2 GHz and is fabricated using the latest SiGe HBT 50 GHz FT process, featuring 1 micron emitters with Vceo > 7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125ºC operating range (-40C to +85C) and are ideal for use as buffer amplifiers in oscillator applications covering cellular, ISM and narrowband PCS bands. Isolation vs. Frequency 0 -20 DC-6000 MHz Silicon Germanium HBT Cascadeable Gain Block Product Features • DC-6000 MHz Operation • Excellent Isolation, >50 dB at 900 MHz • Single Supply Voltage • Unconditionally Stable • 50 Ohms In/Out, Broadband Match for Operation from DC - 6 GHz dB -40 -60 -80 100 500 900 1900 2400 3500 6000 Applications • Buffer Amplifier for Oscillator Applications • Broadband, High Isolation Frequency MHz Sy mbol P 1dB S 21 Parameters: Test C onditions: Z0 = 50 Ohms, Id = 12 mA, T = 25ºC Output Power at 1dB C ompressi on f = 850 MHz f = 1950 MHz f = D C - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 6000 MHz f = D C - 1000 MHz f = 1000 - 2000 MHz f = 2000 - 6000 MHz f = D C - 2400 MHz f = 2400 - 6000 MHz f = D C - 2400 MHz f = 2400 - 6000 MHz f = 850 MHz f = 1950 MHz f = D C - 1000 MHz f = 1000 - 2400 MHz ...