SUD50N02-06P

SUD50N02-06P Vishay Siliconix N-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.0060 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A)a 26 21 TO-252 GDS Top View Drain Connected to Tab Ordering Information: SUD50N02-06P-E3 (Lead (Pb) free) FEATURES TrenchFET® Power MOSFET 175 °C Junction Temperature PWM Optimized for High Efficiency 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck DC/DC Conversion - Desktop - Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TA = 25 °C TC = 25 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a IS Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TA = 25 °C TC = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 20 ± 20 26a 50b 100 26 45 101 6.8a 65 - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes: a. Surface mounted on FR4 board, t ≤ 10 s. b. Limited by package. t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 40 1.9 Maximum 22 50 2.3 Unit °C/W Document Number: 71931 www.vishay.com S11-2308-Rev. D, 21-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC D...